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Integrated semiconductor device, has active trenches and spacing of directly adjacent contact trenches larger than half width of contact trenches
Integrated semiconductor device, has active trenches and spacing of directly adjacent contact trenches larger than half width of contact trenches
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机译：集成半导体器件，具有有源沟槽和直接相邻的接触沟槽的间距大于接触沟槽的一半宽度
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摘要
Widths (Dz) of the active trenches (32) and the spacing (dr) of directly adjacent contact trenches (42) are formed no more than half as wide as the width (Dr) of the contact trenches (42), so that Dz is less than or equal to 0.5 Dr, and dr is less than or equal to 0.5 Dr. The spacing (dz) of directly adjacent active trenches and the widths (dz) of the active mesas (Mz) and the width (Dr) of the contact trenches are wider than double the original thickness DTEOS of the first and/or second insulation region, so that dz is greater than or equal to 2 dTEOS and Dr is greater than or equal to 2 dTEOS. An independent claim is included for: a method of manufacturing an integrated semiconductor device.
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