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Semiconductor unit e.g. dynamic RAM memory chip, manufacture, involves partially arranging hard mask for protecting border area of substrate, before etching border area that lies beneath mask
Semiconductor unit e.g. dynamic RAM memory chip, manufacture, involves partially arranging hard mask for protecting border area of substrate, before etching border area that lies beneath mask
The method involves structuring a substrate (1) by etching a border area of the substrate that lies beneath a hard mask (2). The hard mask is partially arranged for protecting the border area, before etching the border area. The hard mask is produced by etching an oxide layer, and the border area is covered with a cover ring during etching. The hard mask is deposited at the circumference of substrate. An independent claim is also included for a structured substrate for manufacturing a semiconductor unit e.g. dynamic random access memory (DRAM) memory chip.
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