首页> 外国专利> STRUCTURE AND FABRICATION PROCESSES OF FIELD-EFFECT FULLERENE SHUTTLE NANOMEMORY DEVICE BASED ON CARBON NANOPEAPOD

STRUCTURE AND FABRICATION PROCESSES OF FIELD-EFFECT FULLERENE SHUTTLE NANOMEMORY DEVICE BASED ON CARBON NANOPEAPOD

机译:基于碳纳米颗粒的场效应富勒烯穿壳纳米机的结构与制备过程

摘要

The present invention relates to a nanometer-zone-information storage device manufacturing process, and more particularly, the fullerene (Fullerene) and endo contained therein using the bean-shaped carbon nanotube (Carbon Nanopeapod) - positions of the fullerene (Endo-Fullerene) by the control by an external electric field and the fullerene endo- according to the position of the fullerene relates to a process method to be used as electronic data storage device.; By operating the position of the fullerene from the internal carbon nanocapsules it has been presented that the same may be used as information storage, but by creating a carbon nanocapsules used as nano-information storage is technically very difficult. In addition, even if a substantially produce the nanocapsules have a difficult hagieneun manufactured with the integrated device.; In the present invention, to solve the above problems by using a bean-shaped nanotubes, fullerene and endo- show that the fullerene to produce character information repository via a position control, it is an object of invention a process and a structure therefor. Bean-shaped nanotubes, and to be synthesized in large quantities, using a technique capable of uniformly arranged so as to made with the integrated device.; In order to achieve this object, the present invention sheath structure nanotube step of regularly arranged, pod nano one step of depositing a metal electrode on the tube, the fullerene of the inside through the oxide film and nanotubes etched on the other side on the insulating substrate and endo-step of discharging the fullerene from carbon nanotube, fullerene and endo therein through which - a space in the fullerene can reciprocate, and to re-deposit a metal electrode made of a step of forming an electrode on either side of the nanotubes process that is characteristic.
机译:纳米区信息存储装置的制造方法技术领域本发明涉及一种纳米区信息存储装置的制造方法,尤其涉及使用豆状碳纳米管(Carbon Nanopeapod)的富勒烯(富勒烯)及其中包含的富勒烯(Endo-富勒烯)的位置。通过外部电场和富勒烯内的控制,根据富勒烯的位置,涉及一种用作电子数据存储装置的处理方法。通过操作来自内部碳纳米胶囊的富勒烯的位置,已经表明可以将其用作信息存储,但是通过创建用作纳米信息存储的碳纳米胶囊在技术上非常困难。另外,即使基本上生产的纳米胶囊也难以用集成装置制造。在本发明中,为了通过使用豆形纳米管,富勒烯和内酯来解决上述问题,表明富勒烯经由位置控制来产生字符信息储存库,本发明的目的是其方法和结构。豆形纳米管,并使用能够被均匀地排列以便由集成器件制成的技术进行大量合成。为了实现该目的,本发明的鞘结构纳米管的步骤是规则排列的,荚状纳米管的一个步骤是在管上沉积金属电极,通过氧化膜内部的富勒烯和在绝缘体的另一侧蚀刻的纳米管衬底和从碳纳米管,富勒烯及其中的内腔中释放富勒烯的步骤,富勒烯中的空间可以通过该步骤往复运动,并重新沉积金属电极,该金属电极由在纳米管的任一侧形成电极的步骤制成具有特色的过程。

著录项

  • 公开/公告号KR20050117202A

    专利类型

  • 公开/公告日2005-12-14

    原文格式PDF

  • 申请/专利权人 HWANG HO JUNG;

    申请/专利号KR20040042447

  • 发明设计人 HWANG HO JUNG;KANG JEONG WON;

    申请日2004-06-10

  • 分类号H01L21/8232;

  • 国家 KR

  • 入库时间 2022-08-21 21:27:47

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