首页> 外国专利> METHOD OF MANUFACTURING DOPED Inx AlyGa1-x-yN EPITAXIAL LAYERS, DOPED InxAlyGa1-x-yN EPITAXIAL LAYER AND SEMICONDUCTOR MULTI-LAYER STRUCTURE COMPRISING AT LEAST ONE DOPED InxALyGa1-x-yN EPITAXIAL LAYER, WHERE

METHOD OF MANUFACTURING DOPED Inx AlyGa1-x-yN EPITAXIAL LAYERS, DOPED InxAlyGa1-x-yN EPITAXIAL LAYER AND SEMICONDUCTOR MULTI-LAYER STRUCTURE COMPRISING AT LEAST ONE DOPED InxALyGa1-x-yN EPITAXIAL LAYER, WHERE

机译：制造掺杂的Inx AlyGa1-x-yN表皮层的方法，掺杂的InxAlyGa1-x-yN表皮层和由至少一个掺杂的InxALyGa1-x-yN表皮层组成的半导电多层结构

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摘要

The method is based on the epitaxial deposition of layers with donor or/and acceptor or/and isoelectronic or/and magnetic dopants on crystalline substrates with the threading dislocation (TD) density less than 10SUP5/SUPcmSUP-2/SUP and disorientation angle (a) of atomic steps (1) relatively to the crystalline planes from 0.3' to 30°, where the epitaxial growth temperature is lower than the InN metastability temperature, by molecular beam epitaxy with chemically active nitrogen atoms and molecules (Reactive Nitrogen Molecular Beam Epitaxy - RN MBE) . Concentration of the threading dislocations (TD) in the grown layer according to this invention is lower than 10SUP5/SUPcmSUP-2/SUP and the concentration of substitutional dopants (like Si, Ge, Te, Mn, Mg, Be, Fe, Er, Ca, C, Cr, Zn) is higher than 10SUP18/SUPcmSUP-3/SUP.

机译：该方法基于外延沉积具有施主或/和/或受主或/和等电子或/和磁性掺杂剂的层在晶体位错密度（TD）小于10 ^{5 cm -2 和位错角（a），其中外延生长温度低于InN亚稳态温度活性氮原子和分子（活性氮分子束外延-RN MBE）。在根据本发明的生长层中的螺纹位错（TD）的浓度低于10 ^{5 cm ^{-2 ，并且替代掺杂剂（例如Si，Ge， Te，Mn，Mg，Be，Fe，Er，Ca，C，Cr，Zn）高于10 ^{18 cm ^{-3 。}}}}}

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公开/公告号WO2006065160A8

专利类型
公开/公告日2006-11-02

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申请/专利权人 INSTYTUT WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK;SKIERBISZEWSKI CZESLAW;POROWSKI SYLWESTER;GRZEGORY IZABELLA;PERLIN PIOTR;LESZCZYNSKI MICHAL;SIEKACZ MARCIN;FEDUNIEWICZ ANNA;SUSKI TADEUSZ;WISNIEWSKI PRZEMYSLAW;BOCKOWSKI MICHAL;
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申请/专利号WO2005PL00081
发明设计人 SKIERBISZEWSKI CZESLAW;POROWSKI SYLWESTER;GRZEGORY IZABELLA;PERLIN PIOTR;LESZCZYNSKI MICHAL;SIEKACZ MARCIN;FEDUNIEWICZ ANNA;SUSKI TADEUSZ;WISNIEWSKI PRZEMYSLAW;BOCKOWSKI MICHAL;
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申请日2005-12-14
分类号H01L21/203;H01L21/20;
国家 WO
入库时间 2022-08-21 21:30:32

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