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Method of forming silicon-based thin film, silicon-based thin film and photovoltaic element
Method of forming silicon-based thin film, silicon-based thin film and photovoltaic element
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机译：硅基薄膜的形成方法，硅基薄膜和光伏元件
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摘要
In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q = Po×PR/S/d is controlled so as to be 50 or more, wherein Po (W) is a supplied power, S (cm2) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and PR (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.
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机译：在使用包含卤化硅和氢的原料气体的高频等离子体CVD中，将由Q ＝ Po×PR / S / d限定的Q值控制为50以上，其中提供Po（W）。功率，S（cm 2）是高频导入电极的面积，d（cm）是高频导入电极与基板之间的距离，PR（mTorr）是压力。从而，提供了形成具有工业实用水平的成膜速率的硅薄膜的方法，硅薄膜和光电特性优异的光电元件。
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