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Thin film magnetic field sensor structure having magneto-resistive multilayer system with spin dependent electron scattering
Thin film magnetic field sensor structure having magneto-resistive multilayer system with spin dependent electron scattering
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机译：具有具有自旋相关电子散射的磁阻多层系统的薄膜磁场传感器结构
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摘要
The thin film structure of a sensor includes a multi-layer system having an increased magnetoresistive effect which has a spin dependence of electron scattering at an interface (R1, R2) as well as diffuse scattering of non-reflected electrons is. The spin-dependent reflective interface (R1, R2) should be between neighboring layers (M1, Z or M2, Z) are made of a magnetic or non-magnetic material, wherein the materials are adapted to each other grid dimensions have and are non-miscible. The layers (M1, M2) of magnetic material are preferably divided into spin selectively reflective and scattering regions.
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