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Multiple layers of SiO2 and quantum dots for optical device of PbTe keyer
Multiple layers of SiO2 and quantum dots for optical device of PbTe keyer
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机译：PbTe键控器光学器件的多层SiO2和量子点
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摘要
"Layers of SiO ~ 2 ~ and quantum dots of PbTe keyer for optical device.The present invention relates to the manufacture of multilayer SiO ~ 2 ~ and quantum dots of PbTe, used as active region.For the manufacture of any kind of nonlinear optical device key in shaping a Fabry - Perot optical cavity - stabilization components.This device has the advantage of being completely optical, only the light is interacting, and does not need any mechanical process, electric.Acoustic or mouse to control light.There is also the use of techniques of photolithography, extremely expensive, with devices based on silicon, for example, or any other make use of this technique.For the manufacture of multilayer QD of PbTe and SiO ~ 2 ~ of alternating manner, the present invention makes use of the two processes alternate deposition, laser ablation,Laser ablation for the manufacture of layers of QD of PbTe and chemical vapor deposition plasma enhanced PECVD for the layers of SiO ~ 2 ~.This invention has its main application as a key optical ultra fast in the range of 1 ps that operates in the region of the optical communications where losses due to attenuation of the optical fibers of silica areMinors.
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