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Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same
Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same
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机译：窄能带隙氮化砷化镓半导体及其离子切割合成方法
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摘要
A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.
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