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Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies
Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies
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机译：在深亚微米CMOS技术中提高厚栅氧化物接地栅NMOSFET的ESD鲁棒性的注入方法
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摘要
An implantation method to improve ESD robustness of thick-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies. Based on standard process flow in DGO, a thick gate-oxide ESD device is improved. Instead of using the standard I/O device, the ESD device uses the thin-oxide N-LDD implantation, and thus its ESD robustness is enhanced. This is performed by updating the logic Boolean operations of thick gate-oxide and thin gate-oxide N-LDD before fabricating the masks. In TGO, the intermediate-oxide ESD uses thin-oxide N-LDD implantation, and the thick-oxide ESD uses intermediate-oxide N-LDD implantation.
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