Method for selectively stressing MOSFETs to improve charge carrier mobility

• 1. 基于预应力施加的薄壁件铣削稳定性改善方法 [P] . 中国专利： CN108984891B . 2019.04.16
• 2. 基于预应力施加的薄壁件铣削稳定性改善方法 [P] . 中国专利： CN108984891A . 2018-12-11
• 3. METHOD FOR SELECTIVELY STRESSING MOSFETS TO IMPROVE CHARGE CARRIER MOBILITY [P] . 美国专利： US2006183279A1 . 2006-08-17

  机译： 选择性调压MOSFET改善电荷载流子迁移率的方法

• 4. Method for selectively stressing MOSFETs to improve charge carrier mobility [P] . 美国专利： US2006223255A1 . 2006-10-05

  机译： 选择性地向MOSFET施加应力以改善载流子迁移率的方法

• 5. Method for selectively stressing MOSFETs to improve charge carrier mobility [P] . 美国专利： US2005199958A1 . 2005-09-15

  机译： 选择性地向MOSFET施加应力以改善载流子迁移率的方法

• 1. An Effective Method to Improve the Performance of Fixed Carrier Membrane via Incorporation of C02-selective Adsorptive Silica Nanopartlcles [J] . 于型伟, 王志, 赵娟, 中国化学工程学报（英文版） . 2011,第005期
• 2. FORWARD GATED-DIODE METHOD FOR EXTRACTING HOT-CARRIER-STRESS-INDUCED BACK INTERFACE TRAPS IN SOI/NMOSFETs [J] . He Jin, Zhang Xing, Huang Ru, 电子科学学刊（英文版） . 2002,第003期
• 3. FORWARD GATED—DIODE METHOD FOR EXTRACTING HOT—CARRIER—STRESS0INDUCED BACK INTERFACE TRAPS IN SOI／NMOSFETs [J] . HeJin, ZhangXing, 等 电子科学学刊：英文版 . 2002,第003期
• 4. Effects of radiation—induced oxide and interface charges on mobility degradation in MOSFETs [J] . 任迪远, 余学锋, 等 核技术：英文版 . 1996,第003期
• 5. Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device [C] . Lou, C.L., Tan, . 1997
• 6. Carrier mobility in organic charge transport materials: Methods of measurement, analysis, and modulation. [D] . Wallace, Jason U. 2009
• 7. Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method [O] . Cedric Rolin, Enpu Kang, Jeong-Hwan Lee, -1
• 8. The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs [O] . Hurley Paul K., Negara Adi, van Hemert T., 2009

• 1. Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors [J] . Sohail Ahmed ,Jiabao Yi . 安徽地质 . 2017,第004期
• 2. 等跨超长钢筋混凝土框架结构温度应力及施加预应力的简化计算及设计方法 [C] . 施泓 ,甄洁 ,朱炳寅 . 第九届后张预应力学术交流会 . 2006
• 3. 应变硅MOSFET载流子迁移率增强机理研究与建模 [A] . 周谦 . 2006