首页> 外国专利> High activity, spatially distributed radiation source for accurately simulating semiconductor device radiation environments

High activity, spatially distributed radiation source for accurately simulating semiconductor device radiation environments

机译:高活性,空间分布的辐射源,可精确模拟半导体器件的辐射环境

摘要

The present invention pertains to radiation sources that mimic radiation environment(s) encountered by packaged semiconductor devices. The sources are suitable for use in test systems operative to test for soft error and/or failure rates in devices sensitive to such radiation. The radiation is highly active to exacerbate soft error rates and thereby accelerate testing and reduce test times. The sources are also relatively uniformly distributed within a medium to simulate the direction(s) and energy spectra of radiation that would actually be encountered by semiconductor devices in device operation.
机译:本发明涉及模仿封装的半导体器件遇到的辐射环境的辐射源。该源适合用于可测试对这种辐射敏感的设备中的软错误和/或故障率的测试系统。辐射具有很高的活性,可加剧软错误率,从而加快测试速度并减少测试时间。这些源还相对均匀地分布在介质内,以模拟半导体器件在设备操作中实际会遇到的辐射方向和能谱。

著录项

  • 公开/公告号US7081635B2

    专利类型

  • 公开/公告日2006-07-25

    原文格式PDF

  • 申请/专利权人 ROBERT CHRISTOPHER BAUMANN;

    申请/专利号US20050087288

  • 发明设计人 ROBERT CHRISTOPHER BAUMANN;

    申请日2005-03-22

  • 分类号A61M36/14;

  • 国家 US

  • 入库时间 2022-08-21 21:43:32

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号