A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.
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机译：一种在衬底上形成外延膜的方法，包括在温度T 增长下在衬底上生长膜的初始层，所述初始层的厚度为h，并在200℃退火膜的初始层。温度T 退火，从而松弛初始层，其中膜的初始层的所述厚度h大于临界厚度h c 。该方法还包括在退火之后在初始层上生长外延膜的附加层。在一些实施例中，该方法进一步包括生长包括至少一个非晶岛的薄膜层。
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