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Copper film containing tungsten nitride for improving thermal stability, electrical conductivity and electric leakage properties and a manufacturing method for the copper film
Copper film containing tungsten nitride for improving thermal stability, electrical conductivity and electric leakage properties and a manufacturing method for the copper film
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机译：用于改善热稳定性，导电性和漏电性能的包含氮化钨的铜膜及其制造方法
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摘要
A copper film containing tungsten nitride is manufactured by co-sputtering method under an Ar/N2 atmosphere and has a composition in ratio of tungsten nitride contained in the copper layer in atomic ratios of more than 97.5% in copper, 0.5 to 1.5% in tungsten and of less than 2.0% in nitrogen. By adding the tungsten nitride, the copper film has improvements in thermal stability, good electrical conductivity and low electrical leakage current. Moreover, the copper film attached on a silicon substrate will generate a self-passivated silicon compound layer to serve as a diffusion barrier layer between the copper film and the silicon substrate during annealing.
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机译：通过共溅射法在Ar / N 2 气氛下制造含有氮化钨的铜膜，该铜膜具有的铜层中所含的氮化钨的原子比为97.5％以上。铜，钨中0.5至1.5％，氮中不到2.0％。通过添加氮化钨，铜膜的热稳定性，导电性良好且漏电流小。而且，附着在硅衬底上的铜膜将产生自钝化的硅化合物层，从而在退火期间用作铜膜和硅衬底之间的扩散阻挡层。
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