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Photonic bandgap materials based on silicon

机译：基于硅的光子带隙材料

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摘要

Method of synthesis of photonic band gap (PBG) materials. The synthesis and characterization of high quality, very large scale, face centered cubic photonic band gap (PBG) materials consisting of pure silicon, exhibiting a complete three dimensional PBG centered on a wavelength of 1.5 μm. This is obtained by chemical vapor deposition and anchoring of disilane into a self-assembling silica opal template, wetting of a thick silicon layer on the interior surfaces of the template, and subsequent removal of the template. This achievement realizes a long standing goal in photonic materials and opens a new door for complete control of radiative emission from atoms and molecules, light localization and the integration of micron scale photonic devices into a three-dimensional all-optical micro-chip.

机译：光子带隙（PBG）材料的合成方法。由纯硅组成的高质量，超大规模，面心立方光子带隙（PBG）材料的合成和表征，显示出以1.5μm波长为中心的完整三维PBG。这是通过化学气相沉积和将乙硅烷固定到自组装二氧化硅蛋白石模板中，润湿模板内表面上的厚硅层并随后除去模板而获得的。这项成就实现了光子材料的长期目标，并为全面控制原子和分子的辐射发射，光的定位以及将微米级光子器件集成到三维全光学微芯片中打开了新的大门。

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公开/公告号US2006209393A1

专利类型
公开/公告日2006-09-21

原文格式PDF
申请/专利权人 SAJEEV JOHN;BENJAMIN EMMANUEL CHOMSKI;ALAN GEOFFREY OZIN;CEFERINO LOPEZ FERNANDEZ;FRANCISCO JAVIER MESEGUER RICO;
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申请/专利号US20050285218
发明设计人 ALAN GEOFFREY OZIN;CEFERINO LOPEZ FERNANDEZ;SAJEEV JOHN;BENJAMIN EMMANUEL CHOMSKI;FRANCISCO JAVIER MESEGUER RICO;
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申请日2005-11-23
分类号H01S3/00;
国家 US
入库时间 2022-08-21 21:47:14

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