首页> 外国专利> Semiconductor device having delay drift compensation circuit that compensates for delay drift caused by temperature and voltage variations in clock tree

Semiconductor device having delay drift compensation circuit that compensates for delay drift caused by temperature and voltage variations in clock tree

机译:具有延迟漂移补偿电路的半导体器件,该电路补偿由时钟树中的温度和电压变化引起的延迟漂移

摘要

A semiconductor device having a delay drift compensation circuit that compensates for a delay drift caused by temperature and voltage variations in a clock tree includes a clock driver having an output port, a first circuit having an input port, a first signal path between the output port of the clock driver and the input port of the first circuit and a first delay drift compensation circuit. The first delay drift compensation circuit, which is coupled with the first signal path, reduces a delay time of the first signal path when a power supply voltage increases, and increases the delay time of the first signal path when a temperature increases.
机译:具有用于补偿由时钟树中的温度和电压变化引起的延迟漂移的延迟漂移补偿电路的半导体器件包括:具有输出端口的时钟驱动器,具有输入端口的第一电路,在输出端口之间的第一信号路径时钟驱动器,第一电路的输入端口和第一延迟漂移补偿电路的电路。与第一信号路径耦合的第一延迟漂移补偿电路在电源电压增加时减少第一信号路径的延迟时间,并且在温度增加时增加第一信号路径的延迟时间。

著录项

  • 公开/公告号US2006152260A1

    专利类型

  • 公开/公告日2006-07-13

    原文格式PDF

  • 申请/专利权人 IN-YOUNG CHUNG;

    申请/专利号US20060324951

  • 发明设计人 IN-YOUNG CHUNG;

    申请日2006-01-04

  • 分类号H03L7/06;

  • 国家 US

  • 入库时间 2022-08-21 21:48:28

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