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FIELD CLEANING METHOD OF SILICON DEPOSITION BY-PRODUCT FILM OF LOW-TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION CHAMBER
FIELD CLEANING METHOD OF SILICON DEPOSITION BY-PRODUCT FILM OF LOW-TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION CHAMBER
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机译：低温等离子体化学气相沉积室硅沉积副产物膜的现场清洁方法
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摘要
PROBLEM TO BE SOLVED: To provide an improving method in field cleaning of deposition by-products in a low-temperature plasma enhanced chemical vapor deposition (PECVD) chamber where the thermal budgets of a process require the minimization of the temperature rise of a susceptor and in the hardware in the chamber.;SOLUTION: In a basic field PECVD method, a cleaning gas is introduced into a chamber for the time and at the temperature sufficient to remove the film of deposition byproducts, and then the cleaning gas containing the deposition byproducts is removed from the PECVD chamber. The improvement for minimizing the susceptor temperature rise in the low-temperature PECVD chamber during cleaning includes using the cleaning gas essentially comprising NF3 for cleaning diluted with helium in the sufficient amount to carry away the heat generated during cleaning of the plasma enhanced low-temperature chemical vapor deposition chamber. The susceptor is maintained at 150°C or below.;COPYRIGHT: (C)2006,JPO&NCIPI
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