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III-V GROUP NITRIDE SERIES SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, III-V GROUP NITRIDE SERIES SEMICONDUCTOR DEVICE, III-V GROUP NITRIDE SERIES SEMICONDUCTOR SUBSTRATE LOT
III-V GROUP NITRIDE SERIES SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, III-V GROUP NITRIDE SERIES SEMICONDUCTOR DEVICE, III-V GROUP NITRIDE SERIES SEMICONDUCTOR SUBSTRATE LOT
PROBLEM TO BE SOLVED: To provide a III-V group nitride series semiconductor substrate and a manufacturing method of the same, a III-V group nitride series semiconductor device and a III-V group nitride series semiconductor substrate lot capable of performing epitaxial growth on a nitride series crystal having an excellent crystallinity with excellent reproducibility.;SOLUTION: The III-V group nitride series semiconductor substrate comprising a III-V group nitride series single crystal and being a III-V group nitride series semiconductor substrate having flat surfaces, wherein a vector that the normal vector of a low exponential surface which is the closest to a substrate surface at an arbitrary point in a substrate plane is projected to the substrate surface is directed to a specific point or region of the interior/exterior of the substrate. For example, vectors which are formed when the vectors of the low exponential surfaces which are the closest to the substrate surfaces of GaN substrates 1 are projected to the substrate surface are a distribution such that they are converged towards the specific region in the interior (or exterior) of the GaN substrate 1 as shown in an arrow 3.;COPYRIGHT: (C)2006,JPO&NCIPI
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