首页> 外国专利> METHOD OF DESIGNING CHARGED PARTICLE BEAM MASK, DESIGN DATA STRUCTURE, CHARGED PARTICLE BEAM MASK AND CHARGED PARTICLE BEAM TRANSFER METHOD

METHOD OF DESIGNING CHARGED PARTICLE BEAM MASK, DESIGN DATA STRUCTURE, CHARGED PARTICLE BEAM MASK AND CHARGED PARTICLE BEAM TRANSFER METHOD

机译:带电粒子束模板的设计方法,设计数据结构,带电粒子束模板和带电粒子束传递方法

摘要

PROBLEM TO BE SOLVED: To provide a method of designing a charged particle beam mask, its design data structure, a charged particle beam mask, and a charged particle beam transferring method which enable die-to-die comparison inspection in a mask defect inspection, when forming a plurality of identical chips on a single mask.;SOLUTION: The charged particle beam mask designing method calculates the number of sub-fields sufficient to cover the total size of a chip pattern, divides the mask into a plurality of mask regions, each corresponding to the sub-field unit based thereon, and forms chip patterns on the respective mask regions, thus obtaining a charged particle beam mask, composed of the plurality of identical chip patterns formed at pitches of a multiple integer of the sub-field size on the mask.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种设计带电粒子束掩膜的方法,其设计数据结构,带电粒子束掩膜和带电粒子束转移方法,以在掩膜缺陷检查中进行芯片间比较检查,解决方案:带电粒子束掩模设计方法计算足以覆盖芯片图案总大小的子场数,将掩模划分为多个掩模区域,每个都对应于子场单元,并在各个掩模区域上形成芯片图案,从而获得带电粒子束掩模,该带电粒子束掩模由以子场尺寸的整数倍的节距形成的多个相同的芯片图案组成戴上口罩;版权:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006032755A

    专利类型

  • 公开/公告日2006-02-02

    原文格式PDF

  • 申请/专利权人 RENESAS TECHNOLOGY CORP;

    申请/专利号JP20040211194

  • 发明设计人 YAMAMOTO JIRO;

    申请日2004-07-20

  • 分类号H01L21/027;G03F1/16;

  • 国家 JP

  • 入库时间 2022-08-21 21:52:43

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