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It produces foundation GaN formation in the hydrogen carrier
It produces foundation GaN formation in the hydrogen carrier
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机译：它在氢载体中产生基础GaN形成
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摘要
PROBLEM TO BE SOLVED: To solve the problem of a conventional GaN/AlGaN or AlGaN/AlGaN quantum well structure an extremely poor light emission efficiency at room temperature and is required to improve the efficiency.;SOLUTION: Nitrogen is used for a carrier gas for growing the crystal of a well layer with a GaN/AlGaN or AlGaN/AlGaN quantum well structure and/or a substance including In is simultaneously supplied for the crystal growth so as to provide a compression strains to the well layer thereby controlling the magnitude and/or the sign of the quantum well structure. Thus, the crystallinity, the symmetry, and the optical characteristics of the quantum well structure can remarkably be enhanced without controlling the thickness of the well layer.;COPYRIGHT: (C)2001,JPO
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