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MULTI-LEVEL STORAGE MEANS, MULTI-LEVEL BUFFER MEANS, AND BI-DIRECTIONAL SWITCHING MEANS
MULTI-LEVEL STORAGE MEANS, MULTI-LEVEL BUFFER MEANS, AND BI-DIRECTIONAL SWITCHING MEANS
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机译：多级存储方式，多级缓冲方式和双向切换方式
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摘要
PROBLEM TO BE SOLVED: To provide a senary storage means having such effects that less numbers of parts, simple constitution, use of a normally-off type FET, less short circuit current of a power source at the time of applying the power source, less numbers of power source lines, prevention of increment of power source voltage, elimination of trouble at the time of read-out, reduction of power loss, reduction of erroneous discrimination of read-out contents, improving of noise proofing property are attained.;SOLUTION: In the senary storage means, a binary CMOS type inverter is provided between power source lines V0 to V5 in which a potential is raised successively, a source of a NMOS is grounded to the power source line V0, a source of a PMOS is grounded to the power source line V5, a series circuit (bi-directional switch) of the NMOS and the PMOS is connected to each of the power source lines V1 to V4, on/off driving of each PMOS and each NMOS is performed by the inverter shown as the figure, "an open end of the NMOS of the power source line VO, an open end of the PMOS of the power source line V5, all open ends of the series circuit, and all input terminals of the inverters" are connected and they are made an input/output terminal Tio.;COPYRIGHT: (C)2006,JPO&NCIPI
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