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Brief description of embodiments of the structure of a domain has gaps lateral and structure of the corresponding domain

机译:域的结构的实施例的简要描述具有横向的间隙和对应域的结构

摘要

Production of microsystem structure with lateral gaps comprises: (a) depositing first sacrificial layer on substrate; (b) forming structural element on sacrificial layer, to form mobile add-on structure with 2 degrees of freedom; (c) covering free surface of structural element with second sacrificial layer of thickness (e=dg) equal to linear dimension of gap; and (d) covering first sacrificial layer with layer of material to form another add-on structure. The production of a microsystem structure with lateral gaps consists of: (a) depositing a first sacrificial layer (CS1) on a substrate (S); (b) forming a structural element (SE) on this sacrificial layer, to form a mobile add-on structure with two degrees of freedom (YY, XX); (c) covering the free surface of the structural element with a second sacrificial layer (CS2) of a thickness (e=dg) equal to the linear dimension of the gap; (d) covering the first sacrificial layer with a layer of material (SM) to form another add-on structure; (e) etching the second sacrificial layer and subsequently the first sacrificial layer to prevent, at least partially, any contact between the structural element in the direction of the first and second degrees of freedom and any other add-on structure and the substrate to produce lateral gaps having a width essentially equal to the thickness of the second sacrificial layer. Independent claims are also included for: (a) a microsystem structure incorporating add-on structures, one of which is mobile with two degrees of freedom, on a substrate by this method; (b) a vibrating beam microresonator incorporating such a microsystem structure; (c) a Lame mode microresonator incorporating such a microsystem structure.
机译:具有横向间隙的微系统结构的生产包括:(a)在衬底上沉积第一牺牲层; (b)在牺牲层上形成结构元件,以形成具有2个自由度的可移动附加结构; (c)用厚度等于缝隙线性尺寸的第二牺牲层覆盖结构元件的自由表面; (d)用材料层覆盖第一牺牲层,以形成另一附加结构。具有横向间隙的微系统结构的生产包括:(a)在衬底(S)上沉积第一牺牲层(CS1); (b)在该牺牲层上形成结构元素(SE),以形成具有两个自由度(YY,XX)的移动附加结构; (c)用第二牺牲层(CS2)覆盖结构元件的自由表面,该第二牺牲层的厚度(e = dg)等于间隙的线性尺寸; (d)用一层材料(SM)覆盖第一牺牲层,以形成另一个附加结构; (e)蚀刻第二牺牲层,然后蚀刻第一牺牲层,以至少部分地防止结构元件在第一和第二自由度方向上与任何其他附加结构之间的任何接触,以及与衬底的接触,从而产生横向间隙的宽度基本上等于第二牺牲层的厚度。还包括以下方面的独立权利要求:(a)通过该方法在基板上结合了附加结构的微系统结构,其中附加结构之一可以两个自由度移动。 (b)结合了这种微系统结构的振动梁微谐振器; (c)结合了这种微系统结构的La模微谐振器。

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