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Production of grid controlled source which emits electrons by means of divided particles for the determination of the grid openings

机译：产生栅控源，该栅控源借助分隔的粒子发射电子以确定栅孔

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摘要

An electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over one of the following layers: the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. The gate openings are then variously employed in forming dielectric openings (56, 58, 80, 114, 128, 144, or 154) through the insulating layer. Electron-emissive elements that can, for example, be shaped like cones (58A or 70A) or like filaments (106B, 116B, 130A, 146A, or 156B) are formed in the dielectric openings.

机译：通过以下方法制造具有下部非绝缘发射极区（42），上面的绝缘层（44）和栅极层（48A，60A，60B，120A或180A / 184）的电子发射极（46）分布在以下层之一上：绝缘层，栅极层，设置在栅极层上方的主层（50A，62A或72），设置在主要层上方的另一层（74）或图案转印层（182）。颗粒用于限定穿过栅极层的栅极开口（54、66、80、122或186/188）。然后，在形成穿过绝缘层的电介质开口（56、58、80、114、128、144或154）中，各种采用栅极开口。在介电开口中形成例如形状可以像圆锥体（58A或70A）或类似细丝（106B，116B，130A，146A或156B）的电子发射元件。

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公开/公告号DE69730333T2

专利类型
公开/公告日2005-09-01

原文格式PDF
申请/专利权人 CANDESCENT INTELLECTUAL PROPERTY SERVICES INC. SAN JOSE CALIF. US;
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申请/专利号DE1997630333T
发明设计人 HAVEN A. DUANE UMPQUA US;KNALL JOHAN N. SUNNYVALE US;SPINDT J. CHRISTOPHER MENLO PARK US;LUDWIG N. PAUL LIVERMORE US;CLEEVES M. JAMES REDWOOD CITY US;MACAULAY M. JOHN PALO ALTO US;
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申请日1997-06-05
分类号H01J9/02;
国家 DE
入库时间 2022-08-21 21:59:05

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