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Current controlled CMOS circuits with inductive broadbanding, has two n channel MOSFETs having their source terminals coupled to first node, gate terminals coupled to receive two differential logic signals, respectively
Current controlled CMOS circuits with inductive broadbanding, has two n channel MOSFETs having their source terminals coupled to first node, gate terminals coupled to receive two differential logic signals, respectively
The MOSFET has two n channel MOSFETs having their source terminals coupled to a first node, their gate terminals coupled to receive two differential logic signals, respectively and their drain terminals coupled respectively to two output nodes. Two series RL circuits are coupled between the two nodes and a logic high level. Two capacitive loads are coupled to the output nodes. A current source n channel MOSFET is coupled between the source terminal of the two select n channel MOSFETs and a logic low level. An independent claim is included for a metal oxide semiconductor field effect transistor circuit fabricated on a silicon substrate.
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