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Simulation model for semiconductor device design, thermal drain noise analysis method, simulation method, and simulation device

机译：半导体器件设计的仿真模型，散热噪声分析方法，仿真方法和仿真设备

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A semiconductor device simulation method includes the step (STEP 8) of storing, in a memory unit, a surface potential and a threshold voltage obtained by a calculation, the step (STEP 9) of calculating thermal drain noise based on the surface potential data and a thermal drain noise stored in the storage unit, and the step (STEP 10) of determining whether or not the thermal drain noise is to be reduced, and taking into account the calculation result in a simulation of the model when determined in that the thermal drain noise is to be reduced. A drain current I¶ds¶ of a MOSFET is calculated and substituted into a relationship for a spectrum density for a drain current noise obtained from an equation according to the Nyquist theorem to thereby have a thermal drain noise coefficient gamma of the MOSFET by using the current I¶ calculate ds¶ into a relation expression for a thermal drain noise spectrum density obtained from the Nyquist logic equation.
机译：半导体器件仿真方法包括步骤（步骤8），该步骤将通过计算获得的表面电势和阈值电压存储在存储单元中;步骤（步骤9），基于表面电势数据计算散热噪声;以及存储在存储单元中的散热噪声，以及确定是否要减小散热噪声的步骤（步骤10），并在确定模型的仿真结果时考虑模型模拟中的计算结果要降低漏极噪声。计算MOSFET的漏极电流I dsds，并将其代入根据奈奎斯特定理从方程式获得的漏极电流噪声的频谱密度的关系，从而通过使用以下公式获得MOSFET的热耗散噪声系数γ电流I¶将ds¶计算为从Nyquist逻辑方程式获得的散热噪声频谱密度的关系表达式。

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