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Phase change memory cell programming method, involves heating memory cell to couple of temperatures, applying current to cell by current generating circuit, and causing circuit to apply reset and set pulses by controller
Phase change memory cell programming method, involves heating memory cell to couple of temperatures, applying current to cell by current generating circuit, and causing circuit to apply reset and set pulses by controller
The method involves heating a memory cell to a couple of temperatures. A write drive circuit (600) comprising a controller to control an operation of voltage reduction and current stage control circuits. A current generating circuit is connected to the reduction circuit and the control circuit. The generating circuit applies current to the cell. The controller causes the generating circuit to apply reset and set pulses. An independent claim is also included for a driver for a phase change memory cell having a higher resistive state and a lower resistive state.
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