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Production of semiconductor structure having recess comprises forming covering layer, and stopping the process after exposing the base region of the covering layer
Production of semiconductor structure having recess comprises forming covering layer, and stopping the process after exposing the base region of the covering layer
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机译：具有凹陷的半导体结构的制造包括形成覆盖层，以及在暴露覆盖层的基极区之后停止该工艺。
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摘要
Production of a semiconductor structure having a recess (2) comprises forming a covering layer (5) on a base region, on a wall region and a peripheral region of the recess in an anisotropic plasma process having an adjustable etching rate and deposition rate so that the base region is more quickly etched than the wall region and the peripheral region, and stopping the process after exposing the base region of the covering layer.
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