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Junction field effect transistor used as a bi-directional high voltage switch comprises p+ -conducting regions lying next to a control electrode and extending with and parallel to a drift zone between electrodes in a semiconductor body
Junction field effect transistor used as a bi-directional high voltage switch comprises p+ -conducting regions lying next to a control electrode and extending with and parallel to a drift zone between electrodes in a semiconductor body
Junction field effect transistor comprises p+ -conducting regions (4, 6) lying next to a control electrode (G) and extending together with and parallel to a drift zone (3) between electrodes in a semiconductor body (1).
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