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PRO conductive interfacial layer for improvement of ferroelectric properties of PZT thin films for use memory capacity and preparing method thereof
PRO conductive interfacial layer for improvement of ferroelectric properties of PZT thin films for use memory capacity and preparing method thereof
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机译：用于提高存储容量的pzt薄膜铁电性能的pro导电界面层及其制备方法
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摘要
PURPOSE: A semiconductor device including a PZT thin film having an improved ferroelectric property and a fabricating method thereof are provided to maintain stoichiometry of PZT by restricting a mutual reaction between a PbRu2O7-x layer and a platinum layer. CONSTITUTION: A platinum layer(4) is formed on an upper surface of a substrate(1). A PbRu2O7-x layer(2) is formed on an upper surface of the platinum layer. A PZT thin film(3) is formed on an upper surface of the PbRu2O7-x layer. A platinum layer is formed on an upper surface of the PZT layer. A thickness of the PbRu2O7-x layer is 20 to 50nm.
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机译：目的：提供一种包括具有改善的铁电性能的PZT薄膜的半导体器件及其制造方法，以通过限制PbRu2O7-x层与铂层之间的相互反应来保持PZT的化学计量。组成：铂层（4）形成在基板（1）的上表面。在铂层的上表面上形成PbRu 2 O 7 -x层（2）。在PbRu 2 O 7 -x层的上表面上形成PZT薄膜（3）。在PZT层的上表面上形成铂层。 PbRu 2 O 7 -x层的厚度为20至50nm。
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