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CONTROL METHOD OF TRENCH DEPTH IN SHALLOW TRENCH ISOLATION PROCESS USING END POINT DETECTOR IN MAIN ETCH AND FORMING METHOD OF ISOLATION TRENCH
CONTROL METHOD OF TRENCH DEPTH IN SHALLOW TRENCH ISOLATION PROCESS USING END POINT DETECTOR IN MAIN ETCH AND FORMING METHOD OF ISOLATION TRENCH
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机译：主蚀刻终点检测器在浅沟槽隔离过程中沟槽深度的控制方法及隔离沟槽的形成方法
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摘要
PURPOSE: A control method of the trench depth in a shallow trench isolation process and a forming method of trench for isolation are provided to obtain an uniform trench depth by using an end point detector in the main etch. CONSTITUTION: A mask layer is formed on a semiconductor substrate. A sacrificial layer for controlling the trench depth is formed on the mask layer, the sacrificial layer is formed with the material, which the etch selective ratio to the semiconductor substrate is 1:1 to 3:1. The sacrificial layer pattern and the mask pattern that expose a device isolation area of the semiconductor substrate are formed. A trench is formed on the device isolation area by the main etch, and the sacrificial layer pattern and the device isolation area are simultaneously etched by the main etch at the etch stop time that the top surface of the mask pattern is exposed.
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