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DISTURBANCE-FREE, RECIPE-CONTROLLED PLASMA PROCESSING SYSTEM, AND METHOD THEREOF FOR SUPPRESSING INFLUENCES DUE TO DISTURBANCE

机译：无扰动，重复控制的等离子体处理系统及其方法，用于抑制由于扰动而产生的影响

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摘要

PURPOSE: A disturbance-free, a recipe-controlled plasma processing system, and a method thereof are provided to suppress influences due to disturbance by performing a feed-back control and a feed-forward control using a monitored output of a sensor and a measured result of a processing-result measurement device. CONSTITUTION: A plasma processor(23) is used for performing a plasma processing operation for a sample located within a vacuum processing chamber. A sensor(24) is used for monitoring process parameters during a processing period of the plasma processor. A processing-result estimation model provision unit estimates a processed result by using a monitored output of the sensor and a preset processed-result estimation equation. An optimum recipe calculation model provision unit(26) calculates optimum processing conditions such that the processed result becomes a target value by using the estimated result of the processed-result estimation model. A controller is used for controlling the plasma processing system by using a recipe generated from the optimum recipe calculation model.

机译：目的：提供一种无干扰的配方控制的等离子体处理系统及其方法，以通过使用传感器的监视输出和测量值执行反馈控制和前馈控制来抑制干扰引起的影响处理结果测量设备的结果。组成：等离子处理器（23）用于对位于真空处理室内的样品执行等离子处理操作。传感器（24）用于在等离子体处理器的处理期间监视过程参数。处理结果估计模型提供单元通过使用传感器的监视输出和预设的处理结果估计方程来估计处理结果。最佳配方计算模型提供单元（26）通过使用处理结果估计模型的估计结果来计算最佳处理条件，以使处理结果成为目标值。控制器用于通过使用从最佳配方计算模型生成的配方来控制等离子体处理系统。

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公开/公告号KR20050016729A

专利类型
公开/公告日2005-02-21

原文格式PDF
申请/专利权人 HITACHI LTD.;
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申请/专利号KR20050005254
发明设计人 IKUHARA SHOJI;KAGOSHIMA AKIRA;KITSUNAI HIROYUKI;MASUDA TOSHIO;MORIOKA NATSUYO;TAMAKI KENJI;TANAKA JUNICHI;YAMAMOTO HIDEYUKI;
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申请日2005-01-20
分类号H01L21/3065;
国家 KR
入库时间 2022-08-21 22:05:51

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