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PLASMA-ETCHING METHOD AND PLASMA-PROCESSING APPARATUS FOR IMPROVING ETCHING PERFORMANCE AND ETCHING UNIFORMITY
PLASMA-ETCHING METHOD AND PLASMA-PROCESSING APPARATUS FOR IMPROVING ETCHING PERFORMANCE AND ETCHING UNIFORMITY
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机译：改善刻蚀性能和刻蚀均匀性的等离子刻蚀方法和等离子体处理装置
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摘要
PURPOSE: A plasma-etching method and a plasma-processing apparatus are provided to improve the etching performance and the etching uniformity by using a reactive ion etching method. CONSTITUTION: A target substrate(G) is loaded on a bottom electrode(16) opposite to a top electrode(18) in a process chamber(10) having a vacuum state. An etching gas is injected into a gap between the top electrode and the bottom electrode. The etching gas is formed with a gas including chlorine atoms or a gas including the chlorine atoms as a main component. A first high frequency and a second frequency are applied to the bottom electrode. The first high frequency has a range of 10 to 30MHz and the second high frequency has a range of 2 to 6MHz.
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