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METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE TO PREVENT CHARACTERISTIC OF OXIDE LAYER BETWEEN LOWER ELECTRODE AND NITRIDE LAYER AND MAXIMIZE PHOSPHOROUS DOPING PROCESS AND NITRIFICATION EFFECT
METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE TO PREVENT CHARACTERISTIC OF OXIDE LAYER BETWEEN LOWER ELECTRODE AND NITRIDE LAYER AND MAXIMIZE PHOSPHOROUS DOPING PROCESS AND NITRIFICATION EFFECT
A kind of purpose: method, the capacitor for being used to form semiconductor device is arranged to prevent a characteristic of an oxide layer between a lower electrode and a nitride layer, white layer and maximizes the doping process of a phosphorus and nitrification effect by using an oxide layer, has a higher dielectric constant than a nitride layer, white layer. Construction: a lower electrode (11) is formed in semi-conductive substrate. First oxide layer is formed in lower electrode. One high dielectric oxide layer is formed in the first oxide layer selected from alumina layer, a HfO2 layers, a Y2O3 layers and a ZrO2 layers is organized one by one. One nitride layer, white layer (19) is formed in high dielectric oxide layer. Second oxidation film (21) is formed in nitride layer, white layer. One upper electrode is formed in the second oxidation film.
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机译：一种目的：方法是，布置用于形成半导体器件的电容器，以防止下电极和氮化物层，白色层之间的氧化物层的特性，并通过使用该电容器来最大化磷的掺杂过程和硝化作用氧化物层具有比氮化物层白色层更高的介电常数。结构：下电极（11）形成在半导体衬底中。在下部电极中形成第一氧化物层。在选自氧化铝层，HfO 2层，Y 2 O 3层和ZrO 2层的第一氧化物层中形成一个高介电氧化物层。在高介电氧化物层中形成一层氮化物层，即白色层（19）。在氮化物层，白色层中形成第二氧化膜（21）。在第二氧化膜中形成一个上电极。
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