METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE TO DECREASE ETCH DAMAGE AND STRESS DAMAGE OCCURRING AT LOWER CORNER OF TRENCH IN ETCHING AND FILLING TRENCH

• 1. 一种形成双角度形貌沟槽的蚀刻方法和氮化镓半导体器件 [P] . 中国专利： CN112735952A . 2021-04-30
• 2. 蚀刻方法、形成沟槽隔离结构的方法、半导体基板和半导体装置 [P] . 中国专利： CN1734722A . 2006-02-15
• 3. METHOD FOR FORMING TRENCH ISOLATION LAYER FOR AVOIDING DAMAGE TO SUBSTRATE TO PREVENT CRITICAL VOLTAGE FROM DECREASING AND CONTROL RESIDUAL GATE POLYSILICON LAYER [P] . 韩国专利： KR20050002023A . 2005-01-07

  机译： 形成沟槽隔离层的方法，该方法可避免减小和控制残留栅极多晶硅层，从而防止损坏，以防止临界电压

• 4. FORMING METHOD OF ISOLATION LAYER PREVENTING ETCH DAMAGE OF TRENCH [P] . 韩国专利： KR20040092808A . 2004-11-04

  机译： 绝缘层防止沟槽腐蚀的形成方法

• 5. METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE REMOVING STABLY DAMAGE LAYER AT SIDE AND BOTTOM OF TRENCH [P] . 韩国专利： KR20050000061A . 2005-01-03

  机译： 去除沟槽侧面和底部的稳定损伤层的半导体器件隔离层的形成方法

• 1. Misalignment Study by Etch Induced Silicon Damage in Single Crystal Etch process for Shallow Trench Isolation Structure [C] . J. C. Lee, S. J. Lee, M. J. Kim, Symposium on solid state topics general session;Meeting of the Electrochemical Society . 2011
• 2. Methodologies for MEMS device performance and damage monitoring. [D] . Park, Kee M. 2003
• 3. The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [O] . Jansen Henri, Boer Meint de, Legtenberg Rob, 1995
• 4. Investigation of plasma etch induced damage in compound semiconductor devices. [R] . Shul, R. J., Lovejoy, M. L., Hetherington, D. L., 1993

• 1. A Review of Creep Deformation and Rupture Mechanisms of Cr-Mo Alloy for the Development of Creep Damage Constitutive Equations under Lower Stress [J] . Qihua Xu ,Qiang Xu ,Zhongyu Lu . 通讯和计算机 . 2013,第009期
• 2. OLED器件金属辅助电极蚀刻方法的研究 [C] . 周刚 ,施展 ,吴玉琦 . 2006中国平板显示学术会议 . 2006
• 3. 含沟槽腐蚀损伤加筋板极限强度研究 [A] . 朱雨帆 . 2019