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SILOXANE RESIN AND SEMICONDUCTOR INTERLAYER DIELECTRIC LAYER USING THE SAME TO IMPROVE MECHANICAL PROPERTIES, LOW DIELECTRIC PROPERTIES
SILOXANE RESIN AND SEMICONDUCTOR INTERLAYER DIELECTRIC LAYER USING THE SAME TO IMPROVE MECHANICAL PROPERTIES, LOW DIELECTRIC PROPERTIES
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机译：硅氧烷树脂和半导电层间介电层使用相同的材料可改善机械性能，低介电性能
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摘要
PURPOSE: A siloxane resin for a semiconductor interlayer dielectric material using the same is provided to improve mechanical properties and low dielectric properties. CONSTITUTION: The siloxane resin is prepared by carrying out hydrolysis and condensation of at least one monomer selected from a radiation type silane monomer represented by formula 1: Si£(CH2)kSiY1Y2Y3|4 wherein k is an integer of 1-10; Y1, Y2 and Y3 are independently C1-C3 alkyl group, C1-C10 alkoxy group or a halogen atom respectively, and at least one of Y1, Y2 and Y3 is a hydrolysable functional group, and compounds represented by formulas 2 to 4, with an acidic or basic catalyst and water in the presence of an organic solvent, wherein the formula 4 is R3Si(X5X6X7)3 in which R3 is a hydrogen atom, C1-C3 alkyl group or C6-C15 aryl group; X5, X6 and X7 are independently C1-C3 alkyl group, C1-C10 alkoxy group or a halogen atom, respectively, and at least one of X5, X6 and X7 is a hydrolysable functional group.
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