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TFT FABRICATION METHOD FOR LOCALLY CRYSTALLIZING A-SI THIN FILM BY APPLYING EXCIMER LASER ANNEALING CRYSTALLIZATION METHOD TO FLEXIBLE SUBSTRATE
TFT FABRICATION METHOD FOR LOCALLY CRYSTALLIZING A-SI THIN FILM BY APPLYING EXCIMER LASER ANNEALING CRYSTALLIZATION METHOD TO FLEXIBLE SUBSTRATE
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机译:将准分子激光退火结晶方法应用于柔性基体的TFT制膜方法来局部结晶A-SI薄膜
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摘要
PURPOSE: A method for fabricating a TFT is provided to prevent damage of a flexible substrate and reduce stress between the flexible substrate and an a-Si thin film by performing a local crystallization process for the a-Si thin film. CONSTITUTION: An a-Si thin film is formed on a flexible substrate(100). A locally-crystallized poly Si thin film is formed on the a-Si thin film by crystallizing a predetermined part of the a-Si thin film. An active region(110) is formed on the locally-crystallized poly Si thin film. A gate electrode(120) is formed on a center of the active layer. A source electrode(130) and a drain electrode(140) are connected to both sides of the active layer.
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