首页> 外国专利> TFT FABRICATION METHOD FOR LOCALLY CRYSTALLIZING A-SI THIN FILM BY APPLYING EXCIMER LASER ANNEALING CRYSTALLIZATION METHOD TO FLEXIBLE SUBSTRATE

TFT FABRICATION METHOD FOR LOCALLY CRYSTALLIZING A-SI THIN FILM BY APPLYING EXCIMER LASER ANNEALING CRYSTALLIZATION METHOD TO FLEXIBLE SUBSTRATE

机译:将准分子激光退火结晶方法应用于柔性基体的TFT制膜方法来局部结晶A-SI薄膜

摘要

PURPOSE: A method for fabricating a TFT is provided to prevent damage of a flexible substrate and reduce stress between the flexible substrate and an a-Si thin film by performing a local crystallization process for the a-Si thin film. CONSTITUTION: An a-Si thin film is formed on a flexible substrate(100). A locally-crystallized poly Si thin film is formed on the a-Si thin film by crystallizing a predetermined part of the a-Si thin film. An active region(110) is formed on the locally-crystallized poly Si thin film. A gate electrode(120) is formed on a center of the active layer. A source electrode(130) and a drain electrode(140) are connected to both sides of the active layer.
机译:目的:提供一种制造TFT的方法,以通过对a-Si薄膜进行局部结晶处理来防止柔性基板的损坏并减小柔性基板与a-Si薄膜之间的应力。组成:a-Si薄膜形成在柔性基板(100)上。通过使a-Si薄膜的预定部分结晶化,在a-Si薄膜上形成局部结晶的多晶硅薄膜。有源区(110)形成在局部结晶的多晶硅薄膜上。在有源层的中心上形成栅电极(120)。源电极(130)和漏电极(140)连接到有源层的两侧。

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