首页> 外国专利> SOLID-STATE IMAGE PICKUP DEVICE FOR PERFORMING READOUT BY MAKING ELECTRIC POTENTIAL OF VERTICAL CHARGE TRANSFER REGION FOR EXTENDING DEPLETION LAYER OF VERTICAL CHARGE TRANSFER REGION TOWARD DIRECTION OF SENSOR BY VOLTAGE APPLIED TO VERTICAL TRANSFER ELECTRODE AND DRIVING METHOD THEREOF

SOLID-STATE IMAGE PICKUP DEVICE FOR PERFORMING READOUT BY MAKING ELECTRIC POTENTIAL OF VERTICAL CHARGE TRANSFER REGION FOR EXTENDING DEPLETION LAYER OF VERTICAL CHARGE TRANSFER REGION TOWARD DIRECTION OF SENSOR BY VOLTAGE APPLIED TO VERTICAL TRANSFER ELECTRODE AND DRIVING METHOD THEREOF

机译：通过使垂直电荷转移区域的电势扩展到垂直电荷转移区域的传感器向电压方向延伸的垂直电荷转移区域的电势来实现读出的固态图像拾取装置，以及用于垂直转移电极和驱动方法的电压

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摘要

PURPOSE: A solid-state image pickup device and a driving method thereof are provided to obtain a wide dynamic range by increasing the amount of charges processed by a vertical CCD. CONSTITUTION: A pixel region formed on a substrate includes a sensor region, a vertical charge transfer region, and a channel stop region. The sensor region(21) is used for converting photoelectrically incident light. The vertical charge transfer region is formed on one side of the sensor region with a readout region(22) interposed between the sensor region and the vertical charge transfer region. The channel stop region(25) is formed on a side opposite from the sensor region with the vertical charge transfer region interposed between the sensor region and the channel stop region. A vertical transfer electrode(27) is formed on the vertical charge transfer region with an insulating layer which is interposed between the vertical transfer electrode and the vertical charge transfer region. The vertical transfer electrode is formed above the vertical charge transfer region such that a width of the vertical transfer electrode and a channel width of the vertical charge transfer region are substantially equal to each other.

机译：目的：提供一种固态图像拾取装置及其驱动方法，以通过增加由垂直CCD处理的电荷量来获得宽动态范围。构成：在基板上形成的像素区域包括传感器区域，垂直电荷转移区域和沟道停止区域。传感器区域（21）用于转换光电入射光。垂直电荷转移区域形成在传感器区域的一侧，在传感器区域和垂直电荷转移区域之间插入有读出区域（22）。沟道停止区域（25）形成在与传感器区域相反的一侧，并且垂直电荷转移区域插入在传感器区域和沟道停止区域之间。垂直传输电极（27）在垂直电荷传输区域上形成有绝缘层，该绝缘层介于垂直传输电极和垂直电荷传输区域之间。垂直转移电极形成在垂直电荷转移区域上方，使得垂直转移电极的宽度和垂直电荷转移区域的沟道宽度基本上彼此相等。

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公开/公告号KR20040103791A

专利类型
公开/公告日2004-12-09

原文格式PDF
申请/专利权人 SONY CORPORATION;
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申请/专利号KR20040039882
发明设计人 KANBE HIDEO;
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申请日2004-06-02
分类号H01L27/146;H01L31/10;H04N5/335;
国家 KR
入库时间 2022-08-21 22:06:26

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