Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed

• 1. 包含偶联的电介质层和金属层的半导体器件、其制造方法和用于偶联半导体器件中的电介质层和金属层的材料 [P] . 中国专利： CN101287777B . 2011.12.21
• 2. 包含偶联的电介质层和金属层的半导体器件、其制造方法和用于偶联半导体器件中的电介质层和金属层的材料 [P] . 中国专利： CN101287777A . 2008-10-15
• 3. Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed [P] . 美国专利： US2004097033A1 . 2004-05-20

  机译： 用于制造半导体器件和集成电路电容器的方法，由此抑制了金属层由于热氧化而导致的表面形态劣化

• 4. Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed [P] . 美国专利： US6683001B2 . 2004-01-27

  机译： 制造半导体器件的方法，由此抑制金属层的表面形态因热氧化而劣化

• 5. Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed [P] . 美国专利： US2002146913A1 . 2002-10-10

  机译： 制造半导体器件的方法，由此抑制金属层的表面形态因热氧化而劣化

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