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Method of making an attenuated phase-shifting mask from a mask blank

机译:由掩模坯料制成衰减相移掩模的方法

摘要

A method of patterning an attenuated phase-shifting mask from a mask blank, is provided. The mask blank has an attenuating and phase-shifting layer formed over a transparent layer. The phase-shifting layer has an initial thickness. The initial thickness of the phase-shifting layer is adapted to provide a first predetermined phase shift for a first wavelength of light passing therethrough. The initial thickness of the phase shifting layer is reduced to a first thickness. Portions of the phase-shifting layer are removed to form a pattern of clear areas. The first thickness of the phase-shifting layer at dark areas is adapted to provide a second predetermined phase shift for a second wavelength of light passing therethrough relative to the same light of the second wavelength passing through the clear areas. The first wavelength differs from the second wavelength.
机译:提供了一种从掩模坯料图案化衰减相移掩模的方法。掩模坯料具有形成在透明层上方的衰减和相移层。相移层具有初始厚度。相移层的初始厚度适于为穿过其的光的第一波长提供第一预定相移。相移层的初始厚度减小到第一厚度。去除相移层的部分以形成透明区域的图案。相移层在暗区的第一厚度适于为穿过其的光的第二波长相对于穿过透明区的第二波长的相同光提供第二预定相移。第一波长不同于第二波长。

著录项

  • 公开/公告号US2005048375A1

    专利类型

  • 公开/公告日2005-03-03

    原文格式PDF

  • 申请/专利权人 CHENG-MING LIN;

    申请/专利号US20030649310

  • 发明设计人 CHENG-MING LIN;

    申请日2003-08-27

  • 分类号G03F9/00;G03C5/00;

  • 国家 US

  • 入库时间 2022-08-21 22:21:21

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