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Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system
Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system
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机译：在带电粒子束微光刻系统中阻挡图案化光束中高度分散的带电粒子的装置和方法
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摘要
Apparatus and methods are disclosed pertaining to microlithography performed using a charged particle beam. In an exemplary apparatus, the projection-optical system includes a first projection lens situated downstream of a pattern-defining reticle and a second projection lens situated downstream of the first projection lens. Between the first and second projection lenses is a back focal plane of the first projection lens, at which focal plane a beam crossover is formed. The projection-optical system includes a cutoff-plate assembly, including at least one aperture-defining cutoff plate, located between the reticle and the back focal plane. The respective aperture in each cutoff plate is wider than an aperture in a scattering aperture conventionally located at the back focal plane. If the cutoff-plate assembly includes multiple cutoff plates, the aperture defined in the cutoff plate closer to the reticle is wider than the aperture defined in the more downstream cutoff plate. At least one of the cutoff plates defines an aperture that is laterally extended in a beam-deflection direction in the projection-optical system.
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