首页>
外国专利>
3C-sic nanowhisker and synthesizing method and 3c-sic nanowhisker
3C-sic nanowhisker and synthesizing method and 3c-sic nanowhisker
展开▼
机译：3c-sic纳米晶须及其合成方法和3c-sic纳米晶须
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention offers a synthesizing method of 3C—SiC: nanowhisker wherein its diameter anid length can be controlled, it can grow on Si substrate, and wherein said method is safe and its cost is low. and said whisker cart emit visible light of various wravelength. ;3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma GVD apparaturi and by holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate 1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particle (3), whisker surface is terminated with H so to maintain the diameter constant, and the metal liquid particle (3) at whisker root takes in Si from Si substrate (1) and penetrates into Si substrate (1). This 3C—SiC nanowhicker cani be used as light-emitting material suitable to Si process, and 3C—SiC nanowhisker device which can emit light boased on quantum confinement effect and Si device can, if mixed together, form very useful device.
展开▼
