A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. ;A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-xMgxSySe1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, a lower doped n−-Zn1-xMgxSySe1-y layer, a higher doped n+-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.
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机译：蓝紫外p-GaAs衬底引脚Zn 1-x Mg x S y Se 1-y 具有高量子效率，小暗电流，高可靠性和长寿命的光电二极管。 ZnMgSSe光电二极管具有金属p电极，p-GaAs单晶衬底，p-（ZnSe / ZnTe）m 超晶格（m：薄膜的整数组），可选地形成p-ZnSe缓冲层，p-Zn 1-x Mg x S y Se 1-y 层i-Zn 1-x Mg x S y Se 1-y 层，n-Zn 1-x Mg x S y Se 1-y 层，n电极和可选提供的减反射电影。入射光到达i层时不通过ZnTe层。由于入射光未被ZnTe层吸收，因此获得了高量子效率和高灵敏度。 ;蓝紫外-p-GaAs衬底雪崩Zn 1-x Mg x S y Se 1-y 光电二极管。 ZnMgSSe雪崩光电二极管具有金属p电极，p-GaAs单晶衬底，p-（ZnSe / ZnTe）m 超晶格（m：薄膜的整数组），可选的形成p-ZnSe缓冲层，即p-Zn 1-x Mg x S y Se 1-y 一层低掺杂的n - -Zn 1-x Mg x S y Se 1- y 层，掺杂更高的n + -Zn 1-x Mg x S y Se 1-y 层，n电极和可选提供的防反射膜。由于入射光不被ZnTe层吸收，因此可获得高雪崩增益，高量子效率和高灵敏度。
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