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Reflectance measurement devices, temperature measuring device and the substrate heat treatment apparatus and reflectance measurement method, temperature measurement method and substrate heat treatment method

机译:反射率测定装置,温度测定装置以及基板热处理装置以及反射率测定方法,温度测定方法以及基板热处理方法

摘要

PROBLEM TO BE SOLVED: To accurately measure the reflectivity of a substrate by acquiring a substrate reflectivity (substrate emissivity) based on on-time intensity signal and off-time intensity signal which are switched between turned-on state and turned-off state. ;SOLUTION: An auxiliary lamp 572c is always turned on, and, with a rotative sector for switching effective reflectivity R1 and R2 provided, an auxiliary sector 572a for switching the light-emission from the upper end of an optical fiber 56b between turned-on state and turned-off state, is rotated. A detection part 571 measures emission intensities I0, I1, and IL. A reflectivity pW of a process substrate W is calculated from the emission intensities I0, I1, and IL, and further, effective reflectivity R1 and R2 are acquired using a conversion table corresponding to this kind of a process substrate W acquired already, from the reflectivity W. Then the process substrate W is thermally processed. Here, a temperature T of the process substrate W is calculated using measured emission intensities I1 and I2 as well as acquired effective reflectivity R1 and R2, and a control part 60 controls a lamp based on the temperature T for temperature-control the substrate W.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过基于在开启状态和关闭状态之间切换的接通时间强度信号和断开时间强度信号来获取基板反射率(基板发射率),从而准确地测量基板的反射率。 ;解决方案:辅助灯572c始终处于打开状态,并设有一个用于切换有效反射率R1和R2的旋转扇区,一个辅助扇区572a用于在打开之间切换从光纤56b上端发出的光状态和关闭状态,进行旋转。检测部分571测量发射强度I0,I1和IL。根据发射强度I0,I1和IL计算处理基板W的反射率pW,并且,使用对应于已经从反射率获得的这种处理基板W的转换表,获取有效反射率R1和R2。 W。然后,对处理基板W进行热处理。这里,使用测量的发射强度I1和I2以及获得的有效反射率R1和R2来计算处理基板W的温度T,并且控制部60基于该温度T控制灯以对基板W进行温度控制。 ;版权:(C)2000,日本特许厅

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