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Includes the production mannered null optical euphotic zone of the semiconductor
Includes the production mannered null optical euphotic zone of the semiconductor
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机译：包括半导体的生产合理的零光学富光区
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摘要
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor photo-detector which easily permits an optical coupling with a fiber at a high accuracy, and photo-detector device using the same about a refraction type photo-detector or waveguide type photo-detector. SOLUTION: A refraction type semiconductor photo-detector, comprising a photo-detector part composed of a semiconductor multilayer structure including a photo detection layer 13, and a light incident end face 11 inclined inwards away from the surface to refract an incident light at the incident end face 11, so as to make the incident light passing through the photo detection layer 13 obliquely in the layer thickness direction and a V- or U-shaped groove facing the incident end face 11, is constituted that the light incident end face part and its vicinity are filled with an org. material 19.
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