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(5) is shown the chemical compound which and, and as a (iii) 3rd monomer as a chemical compound and a (ii) 2nd monomer of 1
(5) is shown the chemical compound which and, and as a (iii) 3rd monomer as a chemical compound and a (ii) 2nd monomer of 1
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机译：（5）表示作为（iii）第三单体作为化合物和（ii）第二单体的化合物
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摘要
The present invention provides photoresist polymers, processes for producing the same, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist polymers of the present invention comprise a moiety of the Formula:where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in thin resist processes and bilayer photoresist processes. Moreover, photoresist polymers of the present invention have a high contrast ratio between the exposed region and the non-exposed region.
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