首页> 外国专利> FAULT DETECTION METHOD OF LASER DIODE, SEMICONDUCTOR LASER EQUIPMENT AND SEMICONDUCTOR LASER EXCITATION SOLID-STATE LASER EQUIPMENT

FAULT DETECTION METHOD OF LASER DIODE, SEMICONDUCTOR LASER EQUIPMENT AND SEMICONDUCTOR LASER EXCITATION SOLID-STATE LASER EQUIPMENT

机译:激光二极管的故障检测方法,半导体激光设备和半导体激光激发固态激光设备

摘要

PROBLEM TO BE SOLVED: To provide the fault detection method of a laser diode, with which the laser diode that breaks down is located without stopping ejection of a laser beam when the laser diode breaks down at an open mode, and also to provide semiconductor laser equipment and semiconductor laser excitation solid-state laser equipment having the semiconductor laser equipment.;SOLUTION: Equipment is provided with the laser diodes 2, bypass diodes 3 which are connected to all the laser diodes 2 in parallel and in a forward direction and have larger voltage characteristics than the laser diodes 2, and a fault detector 5 which detects both end voltages of the laser diodes 2 in which a threshold larger than a total of the forward direction voltages of the laser diodes 2 is set and detects an open mode fault when the voltage exceeds the threshold.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:要解决的问题:提供一种激光二极管的故障检测方法,该激光二极管的故障检测方法位于激光二极管在开路模式下发生故障时不停止激光束的发射而定位在其中的激光二极管设备;以及具有该半导体激光器设备的半导体激光器激发固态激光器设备。;解决方案:该设备配备有激光二极管2,旁路二极管3,旁路二极管3与所有激光二极管2平行且向前连接,并且具有更大的尺寸具有比激光二极管2更高的电压特性的故障检测器5,该故障检测器5检测激光二极管2的两个端电压,其中设置的阈值大于激光二极管2的正向电压的总和,并在出现故障时检测到开路故障电压超过阈值。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005057036A

    专利类型

  • 公开/公告日2005-03-03

    原文格式PDF

  • 申请/专利权人 LASERFRONT TECHNOLOGIES INC;

    申请/专利号JP20030285769

  • 发明设计人 ISHIDA HISANORI;MURAYAMA SHINICHI;

    申请日2003-08-04

  • 分类号H01S5/00;H01S3/094;H01S5/40;

  • 国家 JP

  • 入库时间 2022-08-21 22:29:33

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号