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STATIC DISCHARGE PROTECTIVE ELEMENT AND CIRCUIT, STATIC DISCHARGE PROTECTIVE CIRCUIT DESIGNING SYSTEM, AND STATIC DISCHARGE PROTECTIVE CIRCUIT DESIGNING METHOD AND PROGRAM
STATIC DISCHARGE PROTECTIVE ELEMENT AND CIRCUIT, STATIC DISCHARGE PROTECTIVE CIRCUIT DESIGNING SYSTEM, AND STATIC DISCHARGE PROTECTIVE CIRCUIT DESIGNING METHOD AND PROGRAM
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机译：静电放电保护元件和电路，静电放电保护电路设计系统以及静电放电保护电路设计方法和程序
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摘要
PROBLEM TO BE SOLVED: To provide a static discharge protective element wherein the operating voltage is minutely set according to the breakdown voltage and the wiring resistance of a circuit in a semiconductor integrated circuit.;SOLUTION: The static discharge protective element 1a is connected to the input node Ni of an inner circuit 3 to be protected, and comprises a p-type first semiconductor region (well region) 5, a surge current carrying electrode (drain electrode) 11 forming a Schottky junction by contacting with a part of the well region 5, and connected to the input node Ni; an n+-type second semiconductor region (drain region) 15 in contact with another part of the drain electrode 11 arranged in the well region 5; and an n+-type third semiconductor region (source region) 8 arranged in the well region 5 and separated from the drain region 15; and a control electrode (gate electrode) 17 arranged on the well region 5 in between the drain region 15 and the source region 8, but insulated from the well region 5 and connected to the ground potential.;COPYRIGHT: (C)2005,JPO&NCIPI
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机译：解决的问题：提供一种静电放电保护元件，其中根据击穿电压和半导体集成电路中电路的布线电阻来精细地设置工作电压。内部电路3的输入节点Ni被保护，并包括p型第一半导体区域（阱区域）5，通过与阱区域的一部分接触而形成肖特基结的浪涌电流承载电极（漏极电极）11。 5，与输入节点Ni相连;与布置在阱区5中的漏电极11的另一部分接触的n + 型第二半导体区（漏区）15; n + 型第三半导体区域（源极区域）8配置在阱区域5内且与漏极区域15分离。控制电极（栅电极）17设置在漏极区15和源极区8之间的阱区5上，但与阱区5绝缘并连接到地电位。;版权：（C）2005，JPO＆NCIPI
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