首页> 外国专利> METHOD FOR DEPOSITING CRYSTALLINE SEMICONDUCTOR FILM, CRYSTALLINE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING CRYSTALLINE THIN FILM DIODE, CRYSTALLINE THIN FILM DIODE, METHOD FOR MANUFACTURING CRYSTALLINE THIN FILM TRANSISTOR, CRYSTALLINE THIN FILM TRANSISTOR AND DISPLAY

METHOD FOR DEPOSITING CRYSTALLINE SEMICONDUCTOR FILM, CRYSTALLINE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING CRYSTALLINE THIN FILM DIODE, CRYSTALLINE THIN FILM DIODE, METHOD FOR MANUFACTURING CRYSTALLINE THIN FILM TRANSISTOR, CRYSTALLINE THIN FILM TRANSISTOR AND DISPLAY

机译：沉积结晶半导体膜的方法，结晶半导体膜，制造半导体装置的方法，半导体装置，制造结晶膜薄膜的方法，结晶膜厚度，薄膜薄膜的薄膜厚度和薄膜厚度的方法

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PROBLEM TO BE SOLVED: To manufacture a crystalline thin film semiconductor device having good characteristics by improving the p-n junction, p-i-n junction or crystallinity of a semiconductor film in a channel forming region and minimizing an impurity concentration having an adverse effect on the characteristics.;SOLUTION: One acicular crystal is grown in a thin line 1 by adding a catalytic substance, and a crystalline thin film diode having a p-n junction or a p-i-n junction is manufactured in the thin line part 1, or a crystalline thin film transistor having the thin line part 1 as a channel is manufactured. Furthermore, the catalytic substance is gettered to the outside of the thin line 1. Since no grain boundary exists in these p-n junction and p-i-n junction or in the channel region, the concentration of the catalytic substance is lowered and a diode or a transistor having characteristics close to those attained by using a single crystal can be manufactured. A liquid crystal display 60 having a high numerical aperture or a display 60 incorporating a peripheral circuit can be manufactured using these crystalline thin film semiconductor devices.;COPYRIGHT: (C)2005,JPO&NCIPI

机译：解决的问题：通过改善沟道形成区域中的半导体膜的pn结，pin结或结晶度并最小化对特性有不利影响的杂质浓度，来制造具有良好特性的晶体薄膜半导体器件。：通过添加催化物质在细线1中生长一个针状晶体，并在细线部分1中制造具有pn结或pin结的晶体薄膜二极管，或具有细线的晶体薄膜晶体管制造作为通道的零件1。此外，催化物质被吸到细线1的外部。由于在这些pn结和pin结或沟道区域中不存在晶界，因此催化物质的浓度降低，并且具有特性的二极管或晶体管可以制造出接近于使用单晶所获得的那些。可以使用这些晶体薄膜半导体器件制造具有高数值孔径的液晶显示器60或结合有外围电路的显示器60。版权所有：（C）2005，JPO＆NCIPI

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公开/公告号JP2005235870A

专利类型
公开/公告日2005-09-02

原文格式PDF
申请/专利权人 SHARP CORP;
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申请/专利号JP20040040669
发明设计人 MIYAJIMA TOSHIAKI;
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申请日2004-02-17
分类号H01L21/20;H01L21/336;H01L29/786;H01L29/861;
国家 JP
入库时间 2022-08-21 22:32:52

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