MOLECULAR BEAM EPITAXIAL APPARATUS, AND METHOD FOR MANUFACTURING CUBIC MONOCRYSTAL THIN FILM OF GROUP-III NITRIDE BY USING MOLECULAR BEAM EPITAXIAL APPARATUS

• 1. 用等离子体辅助分子束外延以准范德华外延生长高质量ZnO单晶薄膜的方法 [P] . 中国专利： CN111334856B . 2021.08.06
• 2. 用等离子体辅助分子束外延以准范德华外延生长高质量ZnO单晶薄膜的方法 [P] . 中国专利： CN111334856A . 2020-06-26
• 3. Cleaning method of molecular beam epitaxial growth apparatus, a method of manufacturing a substrate using molecular beam epitaxial growth equipment and apparatus [P] . 日本专利： JP3958698B2 . 2007-08-15

  机译： 分子束外延生长设备的清洁方法，使用分子束外延生长设备制造基板的方法和设备

• 4. CONTROLLING METHOD FOR CONDUCTIVITY TYPE OF THIN FILM CRYSTAL FORMED BY MOLECULAR BEAM EPITAXIAL GROWTH, AND MOLECULAR BEAM EPITAXIAL DEVICE USING THE CONTROLLING METHOD [P] . 日本专利： JPH04216616A . 1992-08-06

  机译： 分子束外延生长形成的薄膜的导电类型的控制方法及使用该方法的分子束外延装置

• 5. MOLECULAR BEAM SOURCE SHUTTER FOR MOLECULAR BEAM EPITAXY AND MOLECULAR BEAM EPITAXY APPARATUS AS WELL AS PRODUCTION OF EPITAXIAL FILM USING THIS MOLECULAR BEAM SOURCE SHUTTER [P] . 日本专利： JPH11314995A . 1999-11-16

  机译： 用于分子束表皮和分子束表皮装置的分子束源闸门以及使用该分子束源闸门生产膜片

• 1. Structural Characterization of Thin Epitaxial GaN Films on Polymer Polyimides Substrates by Ion Beam Assisted Deposition [J] . Sri Vidawati, Jürgen W. Gerlach, Benjamin Herold, 材料物理与化学进展（英文） . 2020,第009期
• 2. Conducting (Si-doped) aluminum nitride epitaxial films grown by molecular beam epitaxy [C] . J. G. Kim, Madhu Moorthy, R. M. Park Symposium on wind-bandgap semiconductors for high-power, high-frequency and high-temperature applications . 1999
• 3. Laser molecular beam epitaxial growth and properties of III-nitride thin film heterostructures on silicon. [D] . Rawdanowicz, Thomas Adolph. 2005
• 4. Localized Strain Measurementin Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-RamanSpectroscopy [O] . Qiu Li, Yong Wang, Tiantian Li, 2020
• 5. Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus [O] . Yuichi Sato, Shota Ishizaki, Yoshifumi Murakami, 2015

• 1. Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus [J] . Yuichi Sato ,Shota Ishizaki ,Yoshifumi Murakami . 现代物理（英文） . 2015,第9期
• 2. Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection [J] . . 同步辐射装置用户科技论文集 . 1999,第001期
• 3. X—ray reflectivity measurement of δ—doped erbium profile in silicon molecular—beam epitaxial layer [J] . JunWan ,Q.J.Jia ,等 . 同步辐射装置用户科技论文集 . 1999,第001期
• 4. Molecular Beam Epitaxial Growth of Pb_(1-x)Eu_xSe_yTe_(1-y) Double Heterostructure [J] . 宋航 ,陈伟立 ,史智盛 . 稀土学报：英文版 . 1992,第3期
• 5. 分子束外延Ⅲ族氮化物场效应晶体管材料 [C] . 孙殿照 ,王晓亮 ,胡国新 . 第六届全国分子束外延学术会议 . 2001
• 6. 立方AlN薄膜的激光分子束外延生长及其光学性能研究 [A] . 黄立荣 . 2014