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MANUFACTURING METHOD FOR SEMICONDUCTOR THIN-FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR AND LIQUID-CRYSTAL DISPLAY AND MANUFACTURING METHOD FOR DRIVER-CIRCUIT INTEGRAL TYPE LIQUID-CRYSTAL DISPLAY
MANUFACTURING METHOD FOR SEMICONDUCTOR THIN-FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR AND LIQUID-CRYSTAL DISPLAY AND MANUFACTURING METHOD FOR DRIVER-CIRCUIT INTEGRAL TYPE LIQUID-CRYSTAL DISPLAY
PROBLEM TO BE SOLVED: To obtain a silicon thin-film being composed of a crystal having a large grain size corresponding to a device size and having the small irregularities of the surface of the crystal.;SOLUTION: An amorphous silicon thin-film 12a is deposited on an insulating layer 11 formed on a substrate 10. A first laser annealing is carried out to the amorphous silicon thin-film 12a, and a polysilicon thin-film 12b having a crystal-grain size of 0.2 m or more is formed. A second laser annealing is carried out to the polysilicon thin-film 12b, crystal grains are grown in the parallel direction to the surface of the substrate 10 and the polysilicon thin-film 12c having a size of 4 m or more in the growth direction of the crystal grains is formed.;COPYRIGHT: (C)2005,JPO&NCIPI
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