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Earthed capacitor for static RAM cell, has electrode constituting active region strongly doped from semiconductor component, and another electrode constituting conducting region enclosed by insulator formed beneath active region
Earthed capacitor for static RAM cell, has electrode constituting active region strongly doped from semiconductor component, and another electrode constituting conducting region enclosed by insulator formed beneath active region
The capacitor has an electrode constituting an active region (D) strongly doped from a semiconductor component formed from the side of a surface of a semiconductor body. Another electrode constitutes a conducting region (BR) enclosed by an insulator (IL) formed beneath the active region and embedded in the body. The conducting region has an extension from which a contact opening is formed towards the latter electrode. Independent claims are also included for the following: (a) SRAM memory cell (b) a manufacturing procedure for a capacitor.
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